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IPM

Intelligent power module(IPM)

  • Intelligent Power Module (IPM), short for Intelligent Power Module, is an advanced power switching device. It has the advantages of GTR(high power transistor) high current density, low saturation voltage and high voltage resistance, and MOSFET(field effect transistor) high input impedance, high switching frequency and low drive power. Moreover, IPM integrates logic, control, detection and protection circuits, which is convenient to use, not only reduces the volume and development time of the system, but also greatly enhances the reliability of the system, and ADAPTS to the development direction of today's power devices - modular, composite and power integrated circuit (PIC), which has been more and more widely used in the field of power electronics.

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Detail

IPM consists of a high-speed, low-power IGBT chip and a preferred gate level drive and protection circuit, as shown in Figure 1. Among them, IGBT is a combination of GTR and MOSFET, and the MOSFET drives the GTR, so IGBT has the advantages of both.


IPM can be divided into four categories according to the internal power circuit configuration: Type H (internal package of one IGBT), type D (internal package of two IGBT), type C (internal package of six IGBT) and type R (internal package of seven IGBT). The low-power IPM uses a multi-layer epoxy insulation system, and the medium-power IPM uses ceramic insulation.